MBE Growth Recipes

All

III-V

III-N

II-VI

GaAs

III-V

Homoepitaxial GaAs buffer layer on semi-insulating GaAs(001). Standard oxide desorption + buffer sequence for optoelectronic device bases.

Sub. Temp

580 °C

V/III Ratio

~15

Growth Rate

1.0 µm/hr

As Pressure

8×10⁻⁶ T

InP

III-V

InP homoepitaxial buffer on Fe-doped InP(001) substrate. Optimized for low background doping and smooth morphology for optoelectronic applications.

Sub. Temp

480 °C

V/III Ratio

~25

Growth Rate

0.8 µm/hr

P Pressure

1.2×10⁻⁵ T

GaN

III-N

GaN nucleation and buffer on c-plane sapphire by plasma-assisted MBE. Low-temperature nucleation layer followed by high-temperature buffer anneal sequence.

Nucl. Temp

550 °C

Buffer Temp

740 °C

Growth Rate

0.3 µm/hr

N₂ Flow

1.5 sccm

AlGaAs

III-V

AlGaAs/GaAs quantum well stack for laser diode active regions. Coming soon.

— Coming Soon —

AlN

III-N

AlN buffer on SiC for high-electron-mobility transistor (HEMT) structures. Coming soon.

— Coming Soon —

CdTe

II-VI

CdTe on GaAs(001) for infrared detector substrates. Coming soon.

— Coming Soon —

Contribute

Share your recipe with the community

Have a growth recipe you'd like to contribute? We review all submissions with our team and publish validated recipes with full attribution. Help build the most comprehensive MBE recipe library available.

Submit a Recipe →